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 (R)
BUL381 BUL382
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s
s s
STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC
APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES
s
1
2
3
DESCRIPTION The BUL381 and BUL382 manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. They use a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 800 400 9 5 8 2 4 70 -65 to 150 150 Uni t V V V A A A A W
o o
C C
June 1998
1/7
BUL381 / BUL382
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I CEO V CEO(sus) V EBO V CE(sat ) Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain RESISTIVE LO AD Turn-on T ime Storage Time Fall T ime RESISTIVE LO AD Turn-on T ime Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime Test Cond ition s V CE = 800 V V CE = 800 V V CE = 400 V I C = 100 mA I E = 10 mA IC = 1 A IC = 2 A IC = 3 A IC = 1 A IC = 2 A IB = 0.2 A IB = 0.4 A IB = 0.8 A IB = 0.2 A IB = 0.4 A V CE = 5 V V CE = 5 V 8 10 1 2.2 800 1 2.5 800 1.7 75 2.6 150 2.6 120 s s ns s s ns s ns s ns L = 25 mH 400 9 0.5 0.7 1.1 1.1 1.2 Tj = 125 oC Min. Typ . Max. 100 500 250 Un it A A A V V V V V V V
V BE(s at) h FE
IC = 2 A I C = 10 mA
t ON ts tf t ON ts tf ts tf ts tf
V CC = 250 V IC = 2 A I B1 = 0.4 A IB2 = -0.4 A (for BUL381only) t p = 30 s V CC = 250 V IC = 2 A I B1 = 0.4 A IB2 = -0.4 A (for BUL382 only) t p = 30 s I C = 2 A VCL = 250 V I B1 = 0.4 A IB2 = -0.8 A L = 200 H I C = 2 A VCL = 250 V I B1 = 0.4 A IB2 = -0.8 A L = 200 H T j = 125 oC
1.4
1.7
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
2/7
BUL381 / BUL382
Safe Operating Areas Derating Curves
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
BUL381 / BUL382
Reverse Biased SOA Inductive Fall Time
Inductive Storage Time
Inductive Fall Time
Inductive Storage Time
Resistive Load Switching Test Ciurcuit
1) Fast electronic switch 2) Non-inductive Resistor
4/7
BUL381 / BUL382
Reverse BSOA and Inductive Load Switching Test Ciurcuit
1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery Rectifier
5/7
BUL381 / BUL382
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
P011C
6/7
BUL381 / BUL382
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. .
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